sic jfet asjd1200r085 asjd1200r085 rev. 0.0 11/10 micross components reserves the right to change products or speci cations without notice. 1 advanced information normally-on trench silicon carbide power jfet features: hermetic to-257 packaging ? 200c maximum operating temperature (260 ? o c contact factory) available screening: ? - mil-prf-19500 equivalent - space level - mil-std-750 methods & conditions inherent radiation tolerance >100k tid ? positive temperature coef cient for ease of paralleling ? extremely fast switching with no ?tail? current at 150c ? 1200 volt drain-source blocking voltage ? rds ? (on)max of 0.085 voltage controlled ? low gate charge ? low intrinsic capacitance ? applications: satellite solar inverters ? mil spec power supplies ? - switch mode - uninterrupted jet engine electronics ? down-hole electronics (motor / compressor control) ? maximum ratings bv ds 1200 v rds (on)max 0.085 : e ts,typ tbd j product summary parameter symbol conditions value unit i d, tj=100 t j = 100 c 52 i d, tj=150 t j = 150 c 43 pulsed drain current (1) i dm t c = 25 c 75 a short circuit withstand time t sc v dd < 800 v, t c < 125 c 50 s power dissipation p d t c = 25 c 114 w gate r source voltage v gs ac (2) r 15 to +15 v operating and storage temperature t j , t j,stg r 55 to +200* o c lead temperature for soldering t sold 1/8" from case < 10 s 260 o c (1) limited by pulse width (2) rg ext =1 ohm, t p < 200ns, see figure 5 for static conditions *consult factory for 260 o c continuous drain current a thermal characteristics typ max thermal resistance, junction r to r case r th,jc r tbd thermal resistance, junction r to r ambient r th,ja r tbd c / w value unit symbol parameter g (1) s (3) d (2,4) internal schematic 1 2 3 4 to-257 non-isolated tab version shown. for isolated tab version, tab (4) is no connect. die inside for more products and information, please visit our website at www.micross.com
sic jfet asjd1200r085 asjd1200r085 rev. 0.0 11/10 micross components reserves the right to change products or speci cations without notice. 2 advanced information min typ max drain r source blocking voltage bv ds v gs = r 15 v, i d = 600 ? a 1200 r r v v ds = 1200 v, v gs = r 15 v, tj = 25 o c r 110 v ds = 1200 v, v gs = r 15 v, tj = 150 o c r 10 200 v gs = r 15 v, v ds = 0v r r 0.1 r 0.3 v gs = r 15 v, v ds = 1200v r r 0.1 r i d = 43 a, v gs = 2 v, tj = 25 c r 0.075 0.085 i d = 43 a, v gs = 2 v, tj = 100 c r 0.14 r gate threshold voltage v gs(th) v ds = 1 v, i d = 34ma r 6.00 r r 4.00 v gate forward current i gfwd v gs = 2 v r 220 r ma r g f = 1 mhz, drain r source shorted r 8 r : r g(on) v gs >2.7v; see figure 5 r 0.5 r : input capacitance c iss r 670 r output capacitance c oss r 103 r reverse transfer capacitance c rss r 97 r effective output capacitance, energy related c o(er) v ds = 0 v to 600 v, v gs = 0 v r 60 r turn r on delay t on r tbd r rise time t r r tbd r turn r off delay t off r tbd r fall time t f r tbd r turn r on energy e on r tbd r turn r off energy e off r tbd r total switching energy e ts r tbd r turn r on delay t on r tbd r rise time t r r tbd r turn r off delay t off r tbd r fall time t f r tbd r turn r on energy e on r tbd r turn r off energy e off r tbd r total switching energy e ts r tbd r total gate charge q g r 30 r gate r source charge q gs r 1 r gate r drain charge q gd r 24 r off characteristics value unit symbol parameter conditions total gate reverse leakage i gss a ma total drain leakage current i dss on characteristics drain r source on r resistance gate resistance r ds(on) : dynamic characteristics v dd = 100 v pf switching characteristics v ds = 600 v, i d = 40 a, inductive load, t j = 25 o c gate driver = +15v, r 15v rg ext = 5ohm v ds = 600 v, i d = 40 a, inductive load, t j = 150 o c gate driver = +15v, r 15v rg ext = 5ohm v ds = 600v, i d = 40 a, v gs = + 2.5 v ns j ns j nc electrical characteristics
sic jfet asjd1200r085 asjd1200r085 rev. 0.0 11/10 micross components reserves the right to change products or speci cations without notice. 3 advanced information figure 1. typical output characteristics i d = f(v ds ); t j = 25c; parameter: v gs figure 2. typical output characteristics i d = f(v ds ); t j = 100c; parameter: v gs 0 10 20 30 40 50 60 70 0246 v ds , drain-source voltage (v) i d , drain-source current (a) 10v 0.0 v 20v - 1.0 v - 2.0 v 0 5 10 15 20 25 30 35 40 45 0246 v ds , drain-source voltage (v) i d , drain-source current (a) 2.0 v 1.0 v 0.0 v -1.0 v -2. 0 v figure 3. typical output characteristics i d = f(v ds ); t j = 150c; parameter: v gs figure 4. typical transfer characteristics i d = f(v gs ); v ds = 5v 0 10 20 30 40 50 60 70 -4.00 -2.00 0.00 2.00 v gs , gate-source voltage (v) i d , drain-source current (a) 0 5 10 15 20 25 30 35 0123456 v ds , drain-source voltage (v) i d , drain-source current (a) 0.0 2.0 v -1.0 v 1.0 v -2.0 v 25 o c 100 o c 150 o c 0.01 0.10 1.00 0 20406080 i d , drain current (a) r ds(on) , drain-source on-resistance (
) 25 o c 150 o c 0.00 0.10 0.20 0.30 0.40 0.50 1.5 2.0 2.5 3.0 v gs , gate-source voltage (v) i gs , gate-source current (a) 0 2 4 6 8 23456 150 o c 25 o c figure 5. gate-source current i gs = f(v gs ); parameter: t j figure 6. drain-source on-resistance r ds(on) = f(i d ); v gs = 2.0; parameter: t j
sic jfet asjd1200r085 asjd1200r085 rev. 0.0 11/10 micross components reserves the right to change products or speci cations without notice. 4 advanced information figure 7. drain-source on-resistance r ds(on) = f(t j ); parameter: i gs figure 8. drain-source on-resistance r ds(on) = f(v gs ); t j = 25 o c 0.060 0.062 0.064 0.066 0.068 0.070 0.072 0.074 0.076 -1.0 0.0 1.0 2.0 v gs , gate-source voltage (v) r ds(on) , drain-source on-resistance (
) 0.0v 1.0v 2.0v 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0 25 50 75 100 125 150 175 t j , junction temperature (c) r ds(on) , drain-source on-resistance (
) figure 9. typical capacitance c = f(v ds ); v gs = 0 v; f = 1 mhz figure 10. gate charge q g = f(v gs ); v ds = 600v; i d = 5a, t j = 25 o c 1.e+00 1.e+01 1.e+02 1.e+03 1.e+04 0 300 600 900 1200 v ds , drain-source voltage (v) c, capacitance (pf) c rss c oss c iss 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 102030 q g , total gate charge (nc) v gs , gate-source voltage (v) min max -8.00 -7.00 -6.00 -5.00 -4.00 -3.00 -2.00 -1.00 0.00 0 50 100 150 200 t j , junction temperature ( o c) v th , gate threshold voltage (v) -1.5mv/ o c 25 o c 100 o c 150 o c 1e-08 1e-07 1e-06 1e-05 1e-04 0 300 600 900 1200 bv ds , drain-source blocking voltage (v) i d , drain leakage current (a) figure 11. gate threshold voltage v th = f(t j ) figure 12. drain-source leakage i d = f(v ds ); v gs = 0v; parameter: t j
sic jfet asjd1200r085 asjd1200r085 rev. 0.0 11/10 micross components reserves the right to change products or speci cations without notice. 5 advanced information figure 13. transient thermal impedance z th(jc) = f(t p ); parameter: duty ratio 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 t p , pulse width (s) z th(jc) , transient thermal impedance (c/w) 0.5 0.3 0.1 0.05 0.02 0.01 single
sic jfet asjd1200r085 asjd1200r085 rev. 0.0 11/10 micross components reserves the right to change products or speci cations without notice. 6 advanced information mechanical drawing ordering information base part number configuration package junction temp. range processing asjd1200r085 blank= non r isolated tab y=to r 257 r el blank s= isolated tab ex /v /s temp ranges: el= elevated temp. range, r 55 o c to 200 o c (t j ) ex= extreme temp. range, r 55 o c to 260 o c (t j ) (consult factory) processing: blank = commercial / standard processing mil r prf r 19500 equivalent processing available per scd /v= jantx mil r prf r 19500 equivalent (future standard offering) /s= jans mil r prf r 19500 equivalent (future standard offering) example part numbers: asjd1200r085sy r el asjd1200r085y r ex has commercial plastic versions of this product available. please refer to the semisouth website http://www.semisouth.com/products/products.html for datasheet speci cations and ordering information. the semisouth part number is sjdp120r085 and is supplied in a to-247 plastic package.
sic jfet asjd1200r085 asjd1200r085 rev. 0.0 11/10 micross components reserves the right to change products or speci cations without notice. 7 advanced information document title normally-on trench silicon carbide power jfet rev # history release date status 0.0 initial release november 2010 advanced information
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